ASM launches PE2O8 silicon carbide epitaxy system

Core Insights - ASM International N.V. has introduced the PE2O8 silicon carbide epitaxy system, which features a dual chamber design aimed at enhancing throughput and reducing ownership costs while maintaining high process uniformity and low defectivity [1][2][3] Company Developments - The PE2O8 system is designed to meet the growing demand for silicon carbide (SiC) in high-power applications, particularly as manufacturers transition from 6" to 8" SiC substrates [2][3] - ASM has been refining its single wafer SiC epitaxy system since 2022, responding to the increased demand for electric vehicles and improved SiC wafer and device yield [3] Industry Trends - The electrification trend is driving power device manufacturers to adopt SiC for applications such as electric vehicles, green power, and advanced data centers, leading to a shift towards larger SiC substrates [2] - The equipment market for SiC epitaxy has seen substantial growth in recent years due to the structural demand for electric vehicles and the need for higher power devices [3]